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| TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT15J121 GT15J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Ultra Fast Switching(UFS :Operating frequency up to 150kHz(Reference) :tr=0.03s(typ.) High speed :tf=0.08s(typ.) :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.) Maximum Ratings (Ta=25) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc=25) Junction temperature Storage temperature range DC 1ms Symbol Ratings Unit VCES VGES IC ICP PC Tj Tstg 600 20 15 45 35 150 -55150 V V A W 2001-7- 1/2 TOSHIBA Preliminary Electrical Characteristics(Ta=25) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min GT15J121 Typ. Max 500 Unit IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff Rth(j-c) VGE=20V,VCE=0 VCE=600V,VGE=0 IC=1.5mA,VCE=5V IC=15A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=15A VGG=+15V,RG=27 (Note 1) (Note 2) 3.0 - 2.7 1300 0.04 0.03 0.12 0.10 0.08 0.20 0.23 0.18 - 1.0 6.0 3.5 0.15 - nA mA V V pF s mJ Thermal resistance 3.57 /W GT15J321 2001-7- 2/2 |
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